Description:2D Monte Carlo Doble Gate Silicon on Insulator MOSFET simulator
Abstract:Monte Carlo simulations of semiconductor devices are computationally very expensive when a realistic simulation is required. This application simulates a 2D Double Gate Silicon on Insulator (DGSOI) MOSFET using the Monte Carlo method. The main motivation of this application is to reduce the execution time and to performe parametric computations over the grid. Therefore, thanks to grid computing we may perform a wide amount of important simulations to study physical characteristics of different transistors.